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A silicon phototransistor with a MIS tunnel junction emitter

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5 Author(s)
Shieh, C.-L. ; Princeton University, Princeton, NJ ; Wagner, S. ; Jackel, L.D. ; Howard, R.E.
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We have fabricated a silicon phototransistor using low-temperature processing. The emitter of the bipolar transistor is an Al-SiO2-p-Si tunnel junction. The quantum efficiency gain is 200 at λ = 0.6328 µm. The common-emitter current gain of the analogous three-terminal metal-insulator-semiconductor (MIS) transistor also is 200. This demonstrates the high minority-carrier injection efficiency of the MIS emitter.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 8 )