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Three-gate MOSFET Providing independent control of transconductance and output resistance

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3 Author(s)
Chang, S.H. ; University of Cincinnati, Cincinnati, OH ; Boyd, J.T. ; Nevin, J.H.

A three-gate MOS transistor is demonstrated. Measurements of operating characteristics illustrate the availability of excellent control of the transconductance while simultaneously maintaining very high output resistance. In analog circuit applications, the three-gate device provides additional advantages including better signal isolation, less nonlinearity, and adjustable mismatch in a differential amplifier. A range of operating voltages over which the transconductance is constant is observed.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 8 )