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Island-edge effects of transistors fabricated in large-area laser micro-zone crystallized Si on insulator

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3 Author(s)
Herbst, D. ; Bell Laboratories, Holmdel, NJ ; Bosch, M.A. ; Tewksbury, S.R.

Device-quality isolated silicon layers on crystalline silicon wafers have been grown by laser micro-zone crystallization. Device fabrication revealed that the lateral isolation of devices is nontrivial. Transistors with various edge configurations exhibit very different electrical characteristics. Parasitic side transistors in island-edge devices are responsible for an early turn-on in n-channel transistors. Their effect has to be taken into account for mobility calculations.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 8 )