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A new method utilizing Ti—silicide oxidation for the fabrication of a MOSFET with a self-aligned Schottky source/drain

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2 Author(s)
T. Yachi ; NTT, Musashino-shi, Tokyo, Japan ; S. Suyama

A short and simple fabrication process to realize a MOSFET with a self-aligned Schottky source/drain is described. This process utilizes Ti-silicide deposition and its oxidation, which simultaneously leads to the self-aligning formation of silicided source/drain regions isolated from gate electrodes and the formation of intermediate insulator between Al wire and gate level. The isolation between source/drain and gate has been realized by oxidation at 800°C for 180 min. Sheet resistance of about 4 Ω on the source/drain level has been achieved. This MOSFET has also minimized the "short-channel effect."

Published in:

IEEE Electron Device Letters  (Volume:4 ,  Issue: 8 )