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An inductively coupled single-flux quantum NDRO memory cell

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3 Author(s)
Kojima, K. ; Electric Corp., Amagasaki, Hyogo, Japan ; Noguchi, T. ; Hamanaka, K.

An inductively coupled single-flux quantum nondestructive readout (NDRO) memory cell was fabricated. Control lines of this memory cell are coupled to the main inductance loop. The margin for the damping resistor becomes larger than for a multiflux quantum memory cell. The memory cell containing all return lines occupies only 247 minimum-linewidth squares, on the basis of a 5-µm rule Pb-alloy technique.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 8 )

Date of Publication:

Aug 1983

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