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Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors

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4 Author(s)
Asbeck, P.M. ; Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA ; Miller, D.L. ; Babcock, E.J. ; Kirkpatrick, C.G.

Post-implant anneals of short (10-15 s) duration are compared with extended (10 min) furnace anneals for the fabrication of Be-implanted MBE-grown GaAlAs/GaAs heterojunction bipolar transistors. It is shown that the thermal pulse anneals can lead to improved Be-implant electrical activation in Ga0.7Al0.3As and GaAs, to improved contact resistance to Be-implanted GaAs, and to improved transistor characteristics. The transistor improvement is inferred to be due to a reduction in diffusion of the grown-in dopant profile.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 4 )