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The use of refractory metal and electron-beam sintering to reduce contact resistance for VLSI

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2 Author(s)
J. Y. -T. Chen ; Hughes Research Laboratories, Malibu, CA ; D. B. Rensch

Low contact resistance for metal on silicon is particularly important for VLSI where contact dimensions become ≤1 µm. This paper reports on e-beam sintering of refractory metal contacts on implanted n+- and p+-silicon layers. With this technique, we have obtained contact resistivities as low as 1.5 × 10-7Ω. cm2and 1.2 × 10-7Ω . cm2for n+and p+contacts, respectively. These values are the lowest contact resistivities which have been achieved experimentally to date. We found no measurable metal-silicon interdiffusion when e-beam sintering was used. Electron-beam-induced MOS damage, including neutral traps, can be removed by a forming gas anneal.

Published in:

IEEE Transactions on Electron Devices  (Volume:30 ,  Issue: 11 )