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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:30 Issue:10 Help

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

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2 Author(s)
Hyung-Kyu Lim ; University of Florida, Gainesville, FL ; Fossum, J.G.

The charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI: e.g,, recrystallized Si on SiO2) MOSFET's is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived. The expressions clearly show the dependence of the linear-region channel conductance on the back-gate bias and on the device parameters, including those of the back silicon-insulator interface. The analysis is supported by current-voltage measurements of laser-recrystallized SOI MOSFET's. The results suggest how the back-gate bias may be used to optimize the performance of the SOI MOSFET in particular applications.

Published in:
Electron Devices, IEEE Transactions on  (Volume:30 ,  Issue: 10 )

Date of Publication: Oct 1983

Page(s):
1244 - 1251
ISSN :
0018-9383
Digital Object Identifier :
10.1109/T-ED.1983.21282
Product Type:
Journals & Magazines
Date of Current Version :
09 August 2005
Issue Date :
Oct 1983
Sponsored by :
IEEE Electron Devices Society

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