By Topic

Ballistic transport in semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Grondin, R.O. ; Colorado State University, Fort Collins, CO ; Lugli, P. ; Ferry, D.K.

The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. We show that this enhancement is a consequence of the presence of scattering even on the very short time scale.

Published in:

Electron Device Letters, IEEE  (Volume:3 ,  Issue: 12 )