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Ultrafast deep UV Lithography with excimer lasers

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3 Author(s)
K. Jain ; IBM Research Laboratory, San Jose, CA ; C. G. Willson ; B. J. Lin

The use of high-power pulsed excimer lasers for photolithography is described for the first time. Short exposure times, high resolution and absence of speckle are experimentally demonstrated. Using a XeCl laser at 308 nm and a KrF laser at 248 nm, excellent quality images are obtained by contact printing in two positive photoresists. Resolution down to 1000 line-pairs/mm is demonstrated. These images are comparable to state-of-the-art lithography done with conventional lamps; the major difference is that the excimer laser technique is ∼ 2 orders of magnitude faster. Preliminary results on reciprocity behavior in several resists are also presented.

Published in:

IEEE Electron Device Letters  (Volume:3 ,  Issue: 3 )