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GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

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7 Author(s)
McLevige, W.V. ; Texas Instruments Incorporated, Dallas, TX ; Yuan, H.T. ; Duncan, W.M. ; Frensley, W.R.
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Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I2L types of digital integrated circuits.

Published in:

Electron Device Letters, IEEE  (Volume:3 ,  Issue: 2 )

Date of Publication:

Feb 1982

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