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White noise of MOS transistors operating in weak inversion

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2 Author(s)
G. Reimbold ; Laboratoire de Physique des Composants a Semiconducteurs, Grenoble Cedex, France ; P. Gentil

A theory is given for the thermal noise of MOS transistors in the weak inversion regime. For MOS transistors with low surface-state density, the relation for the thermal noise in saturation is shown to be the same as a shot noise relation. The theory is compared with measurements and the origin of the white noise in MOST's operating in weak inversion is discussed.

Published in:

IEEE Transactions on Electron Devices  (Volume:29 ,  Issue: 11 )