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A novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 µm

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4 Author(s)
T. M. Benson ; University of Sheffield, Sheffield, England ; T. Murotani ; P. N. Robson ; P. A. Houston

Strain-induced refractive index changes in the vicinity of a remote-edge discontinuity in a metal film deposited on a n-n+GaAs epitaxial layer, give rise to confinement of light. The edge waveguide so formed supports one TE and one TM polarized mode. The propagation constant of the TE mode may be altered by inducing a small refractive-index change through the electro-optic effect.

Published in:

IEEE Transactions on Electron Devices  (Volume:29 ,  Issue: 9 )