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Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's

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2 Author(s)
Cook, R.K. ; IBM General Technology Division, Hopewell Junction, NY ; Frey, J.

The results of computer simulations of submicron-scale Si and GaAs MESFET's which include carrier energy transport effects ("velocity overshoot") are presented. A new technique for solving the energy transport equation, which allows the description of short-time-scale carrier dynamics to be greatly improved without significantly increasing program complexity or computer time relative to conventional numerical simulations is described. The results indicate that the switching times of GaAs MESFET's should be less than would be predicted by conventional numerical models, and are consistent with experimental results.

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Electron Devices, IEEE Transactions on  (Volume:29 ,  Issue: 6 )