By Topic

Backgating and light sensitivity in ion-implanted GaAs integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

Ion-implanted GaAs integrated circuits have been characterized under dark and illuminated conditions to determine the sensitivity of ac parameters to light. Auxiliary experiments were performed on discrete IC elements using white and monochromatic illumination and backgating. Discrete MESFET's were characterized under the various conditions to determine corresponding variations in the magnitudes of Sehottky-barrier height and parasitic channel resistances. We have determined that light sensitivity and backgating are strongly interrelated and arise from a depletion layer at the substrate active-layer interface. We will describe the effect of trap filling on channel resistance and the resulting speed-power variations arising from illumination and backgating.

Published in:

Electron Devices, IEEE Transactions on  (Volume:29 ,  Issue: 5 )