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An MOS device for AC measurement of surface impedance with application to moisture monitoring

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2 Author(s)
Garverick, S.L. ; MIT Lincoln Laboratory, Lexington, MA ; Senturia, S.D.

A surface impedance measurement (SIM) device fabricated using a metal-gate n-channel depletion-mode MOS process is reported. The device serves as the basis of an ac instrumentation system for the measurement of sheet resistances as high as 1016Ω/square in the frequency range 1 Hz to 10 kHz. Results are presented illustrating the use of the device as a moisture monitor.

Published in:

Electron Devices, IEEE Transactions on  (Volume:29 ,  Issue: 1 )

Date of Publication:

Jan 1982

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