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FIPOS(Full Isolation by Porous Oxidized Silicon) technology and its application to LSIs are presented. FIPOS provides thin single crystal Si layers which are dielectrically isolated by thick porous oxidized Si. It realizes high performance CMOS LSIs with low parasitic capacitance. Key technologies developed for the FIPOS process, such as proton implantation for n-type region formation and thick porous Si formation utilizing anodic reaction, are described. A fabricated 1.3 K gate FIPOS/CMOS logic array indicates that FIPOS technology is suitable for high density and high speed CMOS LSIs.