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GaAs MESFET fabrication using maskless ion implantation

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5 Author(s)
Kubena, R.L. ; Hughes Research Laboratories, Malibu, CA ; Anderson, C.L. ; Seliger, R.L. ; Jullens, R.A.
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A 2000-Å-diameter focused-ion beam from a Au-Si liquid-metal-alloy ion source was used to implant the doped regions of GaAs metal-semiconductor gate field-effect transistors. An Al stopping layer on the wafer was used to trap the Au ions. The 140-keV Si++beam component was deflected under computer control to implant 8 × 50 µm active channel regions and 16 × 50 µm contact regions. The devices were metallized using conventional lithography. DC electrical characteristics of the 1.5-µm-gate-length devices are comparable to those of conventionally processed devices of identical geometry.

Published in:

Electron Device Letters, IEEE  (Volume:2 ,  Issue: 6 )

Date of Publication:

Jun 1981

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