By Topic

Optimization of potential profiles in junction charge-coupled devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Wolsheimer, E.A. ; Delft University of Technology, Delft, The Netherlands

Experimental results have shown that the junction charge-coupled device (JCCD) can compete with other types of CCD's in several applications, providing the channel potential can be made sufficiently smooth. Although devices have been fabricated with a charge-transfer intefficiency of 2 × 10-s, the reproducibility was not satisfactory. Two new processes are described for fabricating JCCD's. By solving the two-dimensional Poisson equation numerically the parameters for the two processes are optimized. Computations for solving the lateral confinement problem of the JCCD have been made. A noncritical methtod is described to define the lateral boundaries of the channel. By simulating complete JCCD cells the influence of gate voltages and charge carriers in the channel was investigated. MOS effects caused by the aluminum interconnection layer on top of the devices also have been taken into account. The accuracy of the simulation method is demonstrated by comparing the results with both a one-dimensional simulation and another two-dimensional simulation which requires more computational effort. Based on the results of the computations JCCD's will be fabricated. Experiments will be carded out in order to verify the anticipated properties.

Published in:

Electron Devices, IEEE Transactions on  (Volume:28 ,  Issue: 7 )