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A dynamic average model for the body effect in ion implanted short channel (L = 1µm) MOSFET's

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3 Author(s)
P. K. Chatterjee ; Texas Instruments Incorporated, Dallas, TX ; J. E. Leiss ; G. W. Taylor

Analytical modeling of ion implanted short channel MOSFET's is demonstrated. A dynamic averaging technique is proposed to transform the ion implanted bulk charge distribution into a constant charge and a charge sheet at the Si-SiO2interface, such that the total charge and depletion depth are conserved. This transformation coupled with a two-dimensional gate-source-drain charge-sharing scheme is used to derive an analytical model for ion implanted short channel devices. Experimental data is presented to verify the validity of the model.

Published in:

IEEE Transactions on Electron Devices  (Volume:28 ,  Issue: 5 )