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Planar plasma etching of Mo and MoSi2using NF3

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2 Author(s)
Chow, T.P. ; General Electric Corporate Research and Development, Schenectady, NY ; Steckl, A.J.

Planar plasma etching of Mo and MoSi2using NF3gas mixtures is reported for the first time. The etch rates of Mo, MoSi2, and SiO2were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO2and MoSi2:SiO2was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF3to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF3etching is shown.

Published in:

Electron Devices Meeting, 1980 International  (Volume:26 )

Date of Conference:

1980

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