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Polycrystalline devices in bipolar IC-technology

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2 Author(s)
H. C. de Graaff ; Philips Research Laboratories, Eindhoven - The Netherlands ; J. G. de Groot

Low pressure CVD polysilicon films have been used for making resistors, lateral diodes and bipolar poly-mono transistors. Recombination via grain boundary states dominates the forward characteristics of the lateral diodes whereas Poole-Frenkel emission is probably responsible for the reverse characteristics. The normal and inverse characteristics of the transistors are largely influenced by parasitic lateral diodes Nevertheless βupand βdown-Values of 40 have been reached.

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Electron Devices Meeting, 1980 International  (Volume:26 )

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