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An analytic-predictor model which describes phenomena observed in small geometry MOSFETs is presented. I-V characteristics from subthreshold through saturation are predicted within the bounds of process parameter variations using only physical and structural constants as inputs. A key to the success of this model is the Dynamic Average Doping Transformation which accounts for the doping profile within the channel and is supported by experimental data. Process-device-circuit trade-offs may be examined using this model and a desk top calculator.