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An analytic charge-sharing predictor model for submicron MOSFETs

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2 Author(s)
Chatterjee, Pallab K. ; Texas Instruments Incorporated, Dallas, Texas ; Leiss, J.E.

An analytic-predictor model which describes phenomena observed in small geometry MOSFETs is presented. I-V characteristics from subthreshold through saturation are predicted within the bounds of process parameter variations using only physical and structural constants as inputs. A key to the success of this model is the Dynamic Average Doping Transformation which accounts for the doping profile within the channel and is supported by experimental data. Process-device-circuit trade-offs may be examined using this model and a desk top calculator.

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Electron Devices Meeting, 1980 International  (Volume:26 )

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