Scheduled Maintenance on April 29th, 2016:
IEEE Xplore will be unavailable for approximately 1 hour starting at 11:30 AM EDT. We apologize for the inconvenience.
By Topic

Semiconductor device development in the 1970s and 1980s - A perspective

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
S. M. Sze ; Bell Laboratories, Murray Hill, N. J.

In the 1970s, over 40,000 papers on semiconductor devices were published, with numerous breakthrough in device concepts and performance. By reviewing the highlights of bipolar, unipolar, microwave and optoelectronic device development in the past decade, the trends for the 1980s may be extrapolated. New developments in the bipolar and unipolar device areas included the oxide-isolated bipolar transistor, power thyristors made by the neutron-transmutation process, submicron MOSFETs, laser-processed silicon-on-insulator devices, nonvolatile memories and charge-coupled devices. But while unipolar development is increasing, bipolar development is expected to level off. In the coming decade, the minimum feature length of these devices will no doubt continue to shrink. New device configurations coupled with new fabrication processes will minimize both parasitics and power dissipation. In the foreseeable future, no other semiconductors will seriously challenge the preeminent position of silicon in VLSI applications. In the microwave area, new devices included the high-efficiency IMPATT, permeable-base transistors and MESFETs. Although most microwave devices have reached the stage of mature development, new devices are expected to narrow or eliminate the gap between the present upper limit of microwave frequency (100 GHz) and the lower limit of infrared (1000 GHz). Both isotype and anisotype heterojunctions will play major roles in optoelectronic devices and in novel devices, such as modulation-doped superlattice structures. New devices in this area, which is expected to continue to grow in the 1980s, included the quaternary laser, avalanche photodetectors, and concentrator and thin-film solar cells.

Published in:

Electron Devices Meeting, 1980 International

Date of Conference:

8-10 Dec. 1980