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A diagnostic pattern for GaAs FET material development and process monitoring

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3 Author(s)
Immorlica, A.A. ; Rockwell International Electronics Research Center, Thousand Oaks, CA ; Decker, D.R. ; Hill, W.A.

A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices have been used to study the correlation between the meterial and processing parameters and GaAs FET performance. This diagnostic tool has proven to be an invaluable aid in the development of ion-implanted FET's.

Published in:

Electron Devices, IEEE Transactions on  (Volume:27 ,  Issue: 12 )