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MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

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6 Author(s)
N. Koike ; Hitachi Ltd., Tokyo, Japan ; I. Takemoto ; K. Satoh ; S. Hanamura
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The design consideration and performance of an n-p-n structure 484 × 384 element MOS imager is described. The imager has a photodiode array and scanners separately integrated on different p wells. The horizontal scanner, consisting of bootstrapping type noninverting circuits, features high speed and low noise. The maximum scan rate of the scanner is ∼15 MHz. The vertical scanner, consisting of inverting circuits, has a wide dynamic operating range. It can operate stably under an intense illumination of ∼ 1500 1x. Analysis of the MOS switch with a photodiode is also carried out. The 484 × 384 imager has shown excellent performances: signal to fixed-pattern-noise ratio of 54 dB, horizontal resolution of 260 TV lines, vertical resolution of 350 TV lines, well-balanced spectral response, and antiblooming.

Published in:

IEEE Transactions on Electron Devices  (Volume:27 ,  Issue: 8 )