Referenced Items are not available for this document.
The proximity effect in a raster-scan for electron-beam lithography system was evaluated by Monte Carlo calculation and verified by experiments. It was revealed that the reduction in the beam diameter below the scanning pitch, which links into the shortening of drawing time, is more effective in decreasing the proximity effect than the reduction in the resist thickness. From the calculated results, it was found that the error in linewidth definition due to the proximity effect was less than 10 percent at a linewidth of 1.5 µm with scanning pitch of 0.5 µm, beam diameter of 0.2 µm, and PMMA resist of 1.0-µm thickness.
Published in:
Electron Devices, IEEE Transactions on
(Volume:27
,
Issue:
8
)
Date of Publication: Aug 1980
- Page(s):
- 1460 - 1465
- ISSN :
- 0018-9383
- Digital Object Identifier :
- 10.1109/T-ED.1980.20057
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 August 2005
- Issue Date :
- Aug 1980
- Sponsored by :
- IEEE Electron Devices Society
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