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Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior

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2 Author(s)
Jaeger, R.C. ; Auburn University, Auburn, AL, USA ; Gaensslen, F.H.

Incorporation of temperature dependencies in the one-dimensional Poisson's equation for use in numerical simulation of MOSFET threshold behavior from 350 to 50 K is discussed. Careful consideration has been given to accurate modeling of impurity freeze-out and temperature-dependent parameters. Examples of simulation of depletion-mode MOSFET's demonstrate the importance of proper modeling and show that impurity freezeout must be considered even at room temperature.

Published in:

Electron Devices, IEEE Transactions on  (Volume:27 ,  Issue: 5 )

Date of Publication:

May 1980

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