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Lattice-matched Pb1-xSnxTe/PbTe1-ySeyDH laser diodes operating to 166K

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2 Author(s)
D. Kasemset ; Massachusetts Institute of Technology, Cambridge, Massachusetts ; C. G. Fonstad

The first successful use of PbTeSe confinement layers in lattice-matched PbSnTe diode layers to produce low threshold, high operating temperature devices is reported. Devices with thresholds of 500 A/cm2and emitting over 400 µW at 100K, and operating pulsed to 166K have been made from liquid phase epitaxy heterostructures in which the degree of lattice mismatch was below 0.04%. Results on both broad area and etched mesa stripe devices are reported.

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Electron Devices Meeting, 1979 Internationa  (Volume:25 )

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