Referenced Items are not available for this document.
Lattice-matched Pb
The first successful use of PbTeSe confinement layers in lattice-matched PbSnTe diode layers to produce low threshold, high operating temperature devices is reported. Devices with thresholds of 500 A/cm2and emitting over 400 µW at 100K, and operating pulsed to 166K have been made from liquid phase epitaxy heterostructures in which the degree of lattice mismatch was below 0.04%. Results on both broad area and etched mesa stripe devices are reported.
Published in:
Electron Devices Meeting, 1979 Internationa
(Volume:25
)
Date of Conference: 1979
- Page(s):
- 130 - 132
- Digital Object Identifier :
- 10.1109/IEDM.1979.189558
- Product Type:
- Conference Publications
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