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Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices

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2 Author(s)
R. C. Jaeger ; IBM General Systems Division, Boca Raton, FL ; F. H. Gaensslen

Threshold voltage shifts in ion-implanted depletion-mode MOSFET's depart substantially from the usual dose proportional shift of enhancement-mode devices. Analytic expressions for the relationship between threshold voltage shift and implanted donor dose and position are extended to include impurity freezeout at low temperatures, and a simple model for the observed low substrate sensitivity at low temperature is presented. Criteria to avoid parasitic subthreshold conduction in depletion-mode devices are also established using the threshold shift formulation.

Published in:

IEEE Transactions on Electron Devices  (Volume:26 ,  Issue: 4 )