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A simple current model for short-channel IGFET and its application to circuit simulation

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1 Author(s)
Luong Mo Dang ; Toshiba Corporation, Kawasaki, Japan

The present paper describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 µm and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-µm channel length. In either case, fairly good agreement was obtained between simulated results and measurements

Published in:

IEEE Transactions on Electron Devices  (Volume:26 ,  Issue: 4 )