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1 µm MOSFET VLSI technology: Part II—Device designs and characteristics for high-performance logic applications

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4 Author(s)
Dennard, R.H. ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY ; Gaensslen, F.H. ; Walker, E.J. ; Cook, P.W.

Micrometer-dimension n-channel silicon-gate MOSFET's optimized for high-performance logic applications have been designed and characterized for both room-temperature and liquid-nitrogen-temperature operation. Appropriate choices of design parameters are shown to give proper device thresholds which are reasonably independent of channel length and width. Depletion-type devices are characterized at room temperature for load device use. Logic performance capability is demonstrated by test results on NOR circuits for representative fan-out and loading conditions. Unloaded ring oscillators achieved switching delays down to 240 ps at room temperature and down to 100 ps at liquid nitrogen temperature.

Published in:

Electron Devices, IEEE Transactions on  (Volume:26 ,  Issue: 4 )

Date of Publication:

Apr 1979

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