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Gunn-effect inhibitor and its application to high-speed carry finding device

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2 Author(s)
N. Hashizume ; Electrotechnical Laboratory, Tokyo, Japan ; S. Kataoka

A new type of Gunn-effect inhibitor and a high-speed carry finding device for 8-bit binary adder using the inhibitors are described. The inhibitor is an integration of a Schottky-electrode-triggered Gunn element, a MESFET, and a resistor. The inhibitor retains the high-speed property of, and the operational margin whatsoever owned by the Schottky-electrode-triggered Gunn element. The high-speed carry finding device was made monolithically integrated on a GaAs epi-layer. A novel means employing Schottky barriers is used in the interconnection of the inhibitors. With such means, a signal can be processed with good efficiency and enough operational margin. Experimental results showed that carry signals could be found at the rate of 20 ps/inhibitor. The anode-voltage margin of the whole device was 7 percent.

Published in:

IEEE Transactions on Electron Devices  (Volume:26 ,  Issue: 3 )