By Topic

A high-speed MoSi2-gate 8-kbit read-only memory made with silicon-gate compatible processing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mochizuki, T. ; NEC-Toshiba Information System Company, Ltd., Kawasaki, Japan ; Ohuchi, K.

A high-speed n-channel MoSi2-gate 8-kbit E/D ROM was fabricated with a process similar to the Si gate process. The MoSi2gate ROM achieved higher operating speed than the poly Si gate ROM due to the lower distributed resistance of the interconnection lines. The result was in good agreement with the computor simulation result.

Published in:

Electron Devices, IEEE Transactions on  (Volume:25 ,  Issue: 12 )