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A high-speed MoSi2-gate 8-kbit read-only memory made with silicon-gate compatible processing

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2 Author(s)
Mochizuki, T. ; NEC-Toshiba Information System Company, Ltd., Kawasaki, Japan ; Ohuchi, K.

A high-speed n-channel MoSi2-gate 8-kbit E/D ROM was fabricated with a process similar to the Si gate process. The MoSi2gate ROM achieved higher operating speed than the poly Si gate ROM due to the lower distributed resistance of the interconnection lines. The result was in good agreement with the computor simulation result.

Published in:

Electron Devices, IEEE Transactions on  (Volume:25 ,  Issue: 12 )

Date of Publication:

Dec 1978

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