A method for the characterization of p+-n-n+diodes using DC measurements

An experimental technique using only dc terminal measurements with a special set of masks is presented for characterizing device properties of single diffused p
⁺
-n-n
⁺
diodes. The vertical and lateral current components are separately obtained. The carrier lifetimes in the epitaxial layer and the p
⁺
diffusion, and the recombination velocity at the oxide-silicon p
⁺
interface are experimentally determined. Examples are given and possible sources of errors are discussed.