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A method for the characterization of p+-n-n+diodes using DC measurements

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2 Author(s)
Elsaid, M.H. ; Ain Shams University, Cairo, Egypt ; Roulston, D.J.

An experimental technique using only dc terminal measurements with a special set of masks is presented for characterizing device properties of single diffused p+-n-n+diodes. The vertical and lateral current components are separately obtained. The carrier lifetimes in the epitaxial layer and the p+diffusion, and the recombination velocity at the oxide-silicon p+interface are experimentally determined. Examples are given and possible sources of errors are discussed.

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Electron Devices, IEEE Transactions on  (Volume:25 ,  Issue: 12 )