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Calculation of microwave performance of buffer layer gate GaAs MESFET's

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3 Author(s)
Nagashima, A. ; Matsushita Electronics Corporation Research Laboratory, Takatsuki, Osaka, Japan ; Umebachi, S. ; Kano, G.

The microwave performance of a GaAs MESFET, where a buffer layer of a low carrier concentration is inserted between the gate metal and the channel layer, is calculated and compared with that of a conventional MESFET. It is found that the use of such a high-resistivity buffer layer contributes to a great improvement of the microwave performance of the GaAs MESFET, especially in fTandf_{max}.

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Electron Devices, IEEE Transactions on  (Volume:25 ,  Issue: 5 )