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Physics underlying improved efficiency of high-low-junction emitter silicon solar cells

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3 Author(s)
Fossum, J.G. ; Sandia Laboratories, Albuquerque, NM ; Lindholm, F.A. ; Sah, C.T.

This paper describes the physical behavior of a recently proposed device structure, the HLE solar cell [1], that yields substantial increases in the open-circuit voltage and in the power-conversion efficiency of p-n junction silicon solar cells. The structure differs from the conventional cell structure (n+-p) in that it contains a high-low (H-L) junction in the emitter (n+-n-p). For cells having low base resistivities (∼0.1 Ω-cm), efficiency improvements of about 15% at AM1 and about 40% at 50 suns can be expected. The improvement at 50 suns results in an efficiency of about 20% at 27°C.

Published in:

Electron Devices Meeting, 1977 International  (Volume:23 )

Date of Conference:

1977