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Short-channel effects on the input stage of surface-channel CCD's

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2 Author(s)
Elsaid, M.H. ; University of Waterloo, Waterloo, Ont., Canada ; Chamberlain, Savvas G.

A detailed study of transient signal charge injection into surface-channel charge-coupled devices using a two-dimensional computer model including the source diffusion and the self-induced and fringing field effects has been carried out. The total delay time required to inject a packet of charge into CCD's for a range of device structures was determined. It is found that the maximum clock pulse frequency of operation is determined by the input delay time and not by the speed of charge transfer which is normally assumed. The results of this study are compared with results obtained using a one-dimensional simulation model for charge injection into CCD's. Experimental justification of the one-dimensional model is provided. With the aid of this analysis a design expression for the intrinsic input delay (the delay associated with the fill portion) for short gate surface-channel CCD's is derived and presented in this paper. It is also shown that for short gate devices ( L < 8 µm) the input delay time due to scooping is about two to four times the intrinsic delay.

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Electron Devices, IEEE Transactions on  (Volume:24 ,  Issue: 9 )