By Topic

Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ikeda, K. ; Mitsubishi Electric Corporation, Itami, Japan ; Horiuchi, S. ; Tanaka, T. ; Susaki, W.

Cutoff frequency of GaAs-(Ga,Al)As double heterostructure light-emitting diodes (LED's) is investigated as functions of design parameters, such as hole concentration of the active layer, thickness of the layer, and injected current density. The cutoff frequency increases with increasing the hole concentration and injection current density, and with decreasing the active layer thickness. They are theoretically explained by the simple equation proposed in this paper by setting the recombination constant B to be 1.1 × 10-10cm3/s. A tradeoff between the cutoff frequency and the efficiency as a function of the hole concentration is discussed. By introducing a new idea of the "figure of merit" as a product of the cutoff frequency and the efficiency, the hole concentration is optimized to be 3 × 1018cm-3for Ge-doped active layer.

Published in:

Electron Devices, IEEE Transactions on  (Volume:24 ,  Issue: 7 )