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A VMOS-bipolar compatible technology for high-performance analog integrated circuits

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1 Author(s)
F. E. Holmes ; University of Toronto, Toronto, Canada

A new integrated circuit process is presented which permits the simultaneous fabrication of n-p-n bipolar transitors and p-channel silicon-gate VMOS transistors. The technology involves no extra processing steps compared to the bipolar process. Test results are presented for the resulting VMOS devices.

Published in:

IEEE Transactions on Electron Devices  (Volume:24 ,  Issue: 6 )