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A process and layout-oriented short-channel MOST model for circuit-analysis programs

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3 Author(s)
Compeers, J. ; Catholic University of Leuven, Leuven, Belgium ; de Man, H.J. ; Sansen, W.

A new static model for the saturation region of short-channel MOST's is presented for use in circuit-analysis programs. In addition to the finite lateral electric field at the channel end and the presence of mobile carriers in the depletion region, it takes into account an effective surface concentration and the Gaussian character of the drain junction profile. At the beginning of the circuit analysis, a preprocessor program, which is based on this new MOST model, derives a fitmodel from the processing data. During the circuit analysis, the fitformulas are adapted to the device geometry. Finally, the model is compared with existing models and with experimental results.

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Electron Devices, IEEE Transactions on  (Volume:24 ,  Issue: 6 )