CdS-CuInSe2thin-film solar cells are examined by Auger electron spectroscopy The effects of device fabrication and post-deposition procedures on the depth-compositional profiles and the performance of these photovoltaic devices are presented. The temperature dependence of the grain boundary diffusion coefficient of Cd from the CdS layer into the CuInSe2film is determined experimentally.
Published in:
Electron Devices, IEEE Transactions on
(Volume:24
,
Issue:
4
)
Date of Publication:
Apr 1977
- Page(s):
-
496
-
498
- ISSN :
-
0018-9383
- Digital Object Identifier :
-
10.1109/T-ED.1977.18766
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
09 August 2005
- Issue Date :
-
Apr 1977
- Sponsored by :
-
IEEE Electron Devices Society