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Application of low-impurity concentration (high-resistivity) Si epitaxial technique to high-voltage power transistors

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3 Author(s)
Suzuki, T. ; Hitachi Ltd., Ibaraki, Japan ; Ura, M. ; Ogawa, T.

The results of an application of an epitaxial technique of low-concentration (<1 × 1014atoms/cm3) impurity doping control to high-voltage power transistors (BVCB0= 1200 V, Ic= 2.5 A) are described. An n-epitaxial layer of about 1 × 1015atoms/cm3concentration and about 25-µm thickness and ν-epitaxial layer of 5-8 × 1013atoms/cm3concentration and 155-165- µm thickness are successively grown on the n+-substrates to form the collector region. The p-base and n+-emitter regions are formed by diffusion. It is shown that the transistors fabricated have a collector-base breakdown voltage (BVCB0) of 1400-2300 V and other reasonable electrical characteristics.

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Electron Devices, IEEE Transactions on  (Volume:23 ,  Issue: 8 )