By Topic

Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rai-Choudhury, P. ; Westinghouse Research Laboratories, Pittsburgh, PA ; Bartko, John ; Johnson, J.E.

Recombination centers introduced in silicon p+-n-n+structures by irradiation with 2-MeV electrons are studied by measuring minority carrier lifetime and annealing kinetics. The approximate location of these recombination centers in the forbidden gap and their densities are obtained by the thermally stimulated current method. The results identify one defect as a divacancy with an energy level of Ev+ 0.26 eV. Possible identities of other deep levels are discussed. The technique of minority carrier lifetime control by electron irradiation has been developed into a reliable manufacturing process for power devices.

Published in:

Electron Devices, IEEE Transactions on  (Volume:23 ,  Issue: 8 )