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Characterization of current transport of narrow-base bipolar transistors by the regional approach

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2 Author(s)
Sirsi, R.M. ; Northern Electric Co., Ottawa, Canada ; Boothroyd, A.R.

It is demonstrated that the Ic-VBEtransport characteristics of a narrow-base bipolar transistor can be accurately computed using the regional approach if an appropriate characterization of the effects of mobile carriers in the emitter space-charge region is employed, but that neglect of such effects can lead to serious errors. A new method of approximate analysis for a linearly graded p-n junction is utilized for this purpose, giving results that are in close agreement with those of full computer simulation of the device structure.

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Electron Devices, IEEE Transactions on  (Volume:23 ,  Issue: 3 )