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The calculation of potential profiles in CCD's using Green's function techniques

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2 Author(s)
D. Schechter ; California State University, Long Beach, CA ; R. D. Nelson

A Green's function solution to the two-dimensional electrostatic problem with a planar dielectric discontinuity is formulated. The Green's function for a planar boundary is calculated, and hence this calculation applies only to the case where all gates lie in a plane. The assumption is also made that there is no charge in the oxide. The formalism is then applied to the calculation of the surface potential of a four-phase charge-coupled device (CCD). The calculation involves fairly straightforward integrals over the gates, semiconductor surface, and depletion region.

Published in:

IEEE Transactions on Electron Devices  (Volume:23 ,  Issue: 2 )