By Topic

High speed, low power GaAs JFET integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Notthoff, J.K. ; McDonnell Douglas Astronautics Company, Huntington Beach, California ; Zuleeg, R.

Enhancement mode GaAs junction field-effect transistors have been explored in their application to digital and linear integrated circuit design. A 3-input NAND-gate and a one stage differential amplifier have been fabricated in integrated form on a 30 × 30 mil2chip. The electrical performance characteristics will be described. With a 4 micron gate length the monolithically integrated 3- input NAND-gate has a propagation delay time of 1 ns with a power dissipation of 2mW per gate, i.e., speed-power product of 2 pJ. The differential amplifier has a response time of 2 ns and flat frequency response to about 150 MHz. GaAs enhancement (normally-off) JFET integrated circuits offer better speed-power products than CMOS or Schottky-clamped bipolar ones at operating frequencies of 1 MHz and above. Optimized devices are capable of operating with a speed-power product of 1-2 pJ in the subnano-second switching range. The temperature range from 2°K to 650°K (or 380°C) for GaAs JFET's encompasses applications which are not possible with silicon devices GaAs JFET's and IC's are superior to Si devices and IC's in gamma and neutron environments and offer a potential design in radiation hardened integrated electronics.

Published in:

Electron Devices Meeting, 1975 International  (Volume:21 )

Date of Conference:

1975