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A new five-parameter model for the behavior of field-effect transistors with high drain voltage has been developed. The resulting single expression is shown to predict the drain-current-gate-voltage characteristics of a variety of devices with an accuracy of ±0.002 V over many decades of drain current. Several methods for the evaluation of model parameters are discussed. The effect of temperature is successfully included in the model in one case. Cross-modulation characteristics can be calculated which are in qualitative agreement with measurements.