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A five-parameter model for current and cross modulation in field-effect transistors with high drain voltage

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1 Author(s)
Mihran, T.G. ; General Electric Company, Schenectady, N.Y.

A new five-parameter model for the behavior of field-effect transistors with high drain voltage has been developed. The resulting single expression is shown to predict the drain-current-gate-voltage characteristics of a variety of devices with an accuracy of ±0.002 V over many decades of drain current. Several methods for the evaluation of model parameters are discussed. The effect of temperature is successfully included in the model in one case. Cross-modulation characteristics can be calculated which are in qualitative agreement with measurements.

Published in:

Electron Devices, IEEE Transactions on  (Volume:22 ,  Issue: 11 )