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MOSFET thresholds at 4.2 K induced by cooling bias

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2 Author(s)

The threshold voltage of a MOSFET at 4.2 K is affected by the particular bias condition present while the device is being cooled. Measurements disagree with a simple model based upon stored bulk-charge.

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Electron Devices, IEEE Transactions on  (Volume:21 ,  Issue: 9 )