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The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes

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1 Author(s)
Fisher, D.G. ; David Sarnoff Research Center, RCA, Princeton, N. J.

It has been found that the temperature TAat which Cs and O are applied to (In,Ga)As negative electron affinity photocathodes has a strong influence on the surface escape probability B. Over the temperature range investigated, 25-100°C, B changes by a factor of approximately 30.

Published in:

Electron Devices, IEEE Transactions on  (Volume:21 ,  Issue: 8 )

Date of Publication:

Aug 1974

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